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H20R1203 is 1200V, 20A, IGBT. The IGBT is insulated-gate bipolar transistor. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
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The BUL1203E is manufactured using diffused collector in planar technology to enhance switching speeds and tight h FE range while maintaining a wide RBSOA. Thanks to his enhanced high voltage structure 1 (EHVS1) it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition.
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SRC1203 NPN Silicon Transistor . Switching application Interface circuit and driver circuit application. Features. With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density. Out Voltage Input.
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KSD-R5C005-002 1 R1 R2 22K 22K SOT-23 SRC1203S NPN Silicon Transistor PIN Connection Descriptions Switching application Interface circuit and driver circuit application
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Hello! I am repairing a mid 90s Pioneer RX-560 cassette/tuner/receiver, and need to replace a 3 prong transistor labeled "1203 31". Problem is, I can't seems to find this transistor anywhere. I've never replaced any components on a PCB before, so I'm wondering if I'm going about this all wrong.
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1203 KSA1203 SOT-89 13" -- 4,000. 3 www.fairchildsemi.com KSA1203 Rev. B3 KSA1203 PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
H25R1203 IHW25N120R3 H25R 1203 IGBT 1200V 25A IGBT Power Transistor TO247 MOSFET Feld Effect
AUK corp is a Taiwan-based semiconductor company that specializes in the design, development, and manufacturing of discrete semiconductor components, including diodes, transistors, and MOSFETs. The company was founded in 1991 and is headquartered in New Taipei City, Taiwan. AUK's products are used in a wide range of applications, including.
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2SB1203 is a Bipolar Transistor, -50V, -5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Current Switching Application. Waiting. Product Overview. Applications. Relay drivers, high-speed inverters, converters, and other general high-current switching applications; Features.
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SRC1203 Datasheet (PDF) ..1. Size:187K auk. src1203.pdf. SRC1203NPN Silicon TransistorPIN Connection Descriptions Switching application 2. OUT Interface circuit and driver circuit application Features 3. IN R1 With built-in bias resistors 1 2 3 Simplify circuit design Reduce a quantity of parts and R2manufacturing process R1 R2 High packing.
1203 Draawing Datasheet by Keystone Electronics DigiKey Electronics
The BUL1203E is manufactured using diffused collector in planar technology to enhance switching speeds and tight hFE range while maintaining a wide RBSOA. Thanks to his enhanced high voltage structure 1 (EHVS1) it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition.
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KSR-9003-000 2 SRC1203 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Out Voltage VO 50 V Input Voltage VI 40 V Out Current IO 100 mA Power Dissipation PD 625 mW Junction Temperature TJ 150 °C Storage Temperature TSTG-55 ~ 150 °C Electrical Characteristics (Ta=25°C)
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN6001: 90Kb / 3P: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC1815L-GR: 256Kb / 4P: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD2655: 70Kb / 2P:
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BUL1203EFP. HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. HIGH VOLTAGE CAPABILITY. LOW SPREAD OF DYNAMIC PARAMETERS. MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION. VERY HIGH SWITCHING SPEED. FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS.
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SRC1203M Datasheet, Equivalent, Cross Reference Search. Type Designator: SRC1203M. SMD Transistor Code: 1203. Material of Transistor: Si. Polarity: Pre-Biased-NPN. Built in Bias Resistor R1 = 22 kOhm. Built in Bias Resistor R2 = 22 kOhm. Typical Resistor Ratio R1/R2 = 1. Maximum Collector Power Dissipation (Pc): 0.4 W.
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NPN Silicon Transistor KODENSHI_AUK CORP. SRC1203SF 261Kb / 4P: NPN Silicon Transistor SRC1203SF 261Kb / 4P: Switching application AUK corp: SRC1203U 117Kb / 3P: NPN SILICON TRANSISTOR 1 2: 1 2: SRC1203 Distributor: Distributor: Part # Manufacturer: Description: Price: Qty. BuyNow: Link URL
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H20R1203 IGBT power transistor Specifications/Feature Powerful monolithic body diode with low forward voltage designed for soft commutation only very tight parameter distribution high ruggedness,temperature stable behavior lowVCEsat easy paralle. H20R1203 H20R 1203 IGBT power transistor - 20A / 1200V - (Original) Product Code: TR-H20R1203.